Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN

P-type doping in III-Nitrides has long presented a challenge in the development of wide bandgap optoelectronic devices. To date, magnesium is the only commercially viable acceptor in III-Nitrides. Beryllium has been considered a potential alternative to magnesium, and initial theoretical calculations as well as photoluminescence studies suggested that it is shallower than magnesium in GaN. However, to date, there have been no reliable or repeatable examples of p-type GaN:Be in literature. Here, we present a systematic study of MOCVD-grown GaN:Be with varied doping conditions. All samples show prominent UV and yellow luminescence, characteristic of beryllium acceptor in GaN.