Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna

NANOMATERIALS(2022)

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摘要
We report on single-photon emitters for the telecommunication O-band (1260-1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g((2))(0) = 0.18 at 8 K.
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关键词
quantum dots, single-photon emission, InAs, MBE, nanoantenna
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