Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Z. Mutlu,Y. Lin,G. B. Barin,Z. Zhang,G. Pitner, S. Wang, R. Darawish,M. Di Giovannantonio, H. Wang,J. Cai,M. Passlack,C. H. Diaz,A. Narita,K. Muellen,F. R. Fischer,P. Bandaru,A. C. Kummel,P. Ruffieux,R. Fasel,J. Bokor

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2021）

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Key words

9-atom armchair GNRs,9-AGNRs,short channel back-gate,top-gate dielectric bilayers,GNR,short-channel double-gate FETs,atomically precise graphene nanoribbons,high performance graphene nanoribbon transistors,high-k dielectrics,size 5.5 nm,size 2.5 nm,size 1.0 nm to 1.25 nm,HfO2,Al2O3

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