Silicon-Carbide Epitaxial Structures for Betavoltaic Converters

A physical and technological analysis of silicon-carbide epitaxial structures as the basic components of betavoltaic converters (BVC) is carried out. The main factors limiting the efficiency of SiC-BVCs are determined. It is shown that in order to provide the required level of electric power for an actually long-term inexhaustible energy source, it is necessary to use series-parallel hybrid circuits of large-area betavoltaic multichip converters.