Fast Unveiling of T max in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model

Hasan Kocer,Yilmaz Durna,Burak Gunes, Gizem Tendurus,Bayram Butun,Ekmel Ozbay

IEEE Transactions on Electron Devices（2022）

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摘要

Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide application potential from power amplifiers to satellite, need to be thoroughly examined in terms of reliability in order to benefit the superior intrinsic properties of the device. The most critical parameter in the device reliability is the hotspot, or ${T}_{\text {...

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关键词

Solid modeling,HEMTs,Computational modeling,Electric variables measurement,Temperature measurement,Semiconductor device measurement,Gallium nitride

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