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The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

Aksenov M. S.,Valisheva N. A.,Kovchavtsev A. P.

Technical Physics Letters（2021）

Cited 0|Views2
Key words
In0.53Ga0.47As,anodic oxide,fluorine,C–V characteristics,density of interface states.
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