Facile Access to High-Performance Reverse Intersystem Crossing Oled Materials Through an Unsymmetrical D-a-D' Molecular Scaffold

Organic light-emitting diode (OLED) materials based on a reverse intersystem crossing (RISC) triplet harvesting mechanism have attracted tremendous attention. Currently, many research efforts have been devoted to the construction of D-A or D-A-D RISC-OLED materials whose charge-transfer-featured singlet excited states (1CTD-A) are very close to the local triplet excited states of their D or/and A moieties (3LED or/and 3LEA), so that a small singlet-triplet energy splitting and a large spin-orbit coupling matrix element can be acquired concurrently. However, the chief technical difficulty lies in the accurate prediction and delicate tuning of the 1CTD-A energy levels of these compounds. Herein, by using PCz-TXO2 as an example, we demonstrated that high-performance RISC-OLED materials can be readily achieved by integrating an appropriate D' subunit into a traditional D-A fluorophore that lacks RISC property, i.e., constructing a D-A-D' triad whose 1CTD-A is close to its 3LED'. In comparison with its D-A or D-A-D counterpart of P-TXO2 or DP-TXO2 showing satisfactory photoluminescence efficiency, pure blue gamut but poor RISC, the presence of a carbazole-based D' subunit has negligible influence on the transition feature of its lowest singlet excited state (S1), but triggers significantly enhanced RISC property. Consequently, PCz-TXO2 shows pure blue electroluminescence (EL) inherited from DP-TXO2 [CIE1931: (0.160, 0.089) vs. (0.154, 0.102)], but significantly enhanced external quantum efficiency (EQEmax: 9.5% vs. 6.1%) and exciton utilization efficiency (EUEmax: 93% vs. 42%). Our results present a new method to facilely access RISC materials and can greatly extend the design rationales for high-performance OLED materials.