RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications

Aarti Rathi,Abhisek Dixit,P. Srinivasan, Oscar H. Gonzalez,Fernando Guarin

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

RF reliability of 40-nm PDSOI nFET power amplifier (PA) cell at 26.5GHz is investigated. DC and RF stresses are applied in conducting and non-conducting hot carrier stress modes to study the PA cell RF and DC degradation behavior. The relationship between DC and large-signal RF performance under various RF stress conditions is investigated using DC and RF metrics. The degradation rate depends on R...

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关键词

Radio frequency,Degradation,Measurement,Shape,Power amplifiers,Silicon-on-insulator,Hot carriers

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