Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme

W. C. Chien, L. M. Gignac,Y. C. Chou,C. H. Yang,N. Gong,H. Y. Ho,C. W. Yeh,H. Y. Cheng,W. Kim,I. T. Kuo,E. K. Lai,C. W. Cheng,L. Buzi, A. Ray,C. S. Hsu,R. L. Bruce, M. BrightSky,H. L. Lung

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

A constant current stress scheme is implemented for endurance study on OTS-PCM devices for the first time. It provides a feasible method to estimate the read/write endurance for cross-point PCM products, which can save testing time for chips qualification. A 256kb chip with 1E7 cycles is demonstrated that corresponds with the endurance evaluation on the doped AsGeSe OTS with doped Ge2Sb2Te5 system...

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关键词

Phase change materials,Semiconductor device reliability,Stress,Physics,Testing,Qualifications

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