Electron-assisted switching in FeFETs: Memory window dynamics – retention – trapping mechanisms and correlation
2022 IEEE International Reliability Physics Symposium (IRPS)(2022)
摘要
We investigate the impact of charge-trapping on ferroelectric (FE) switching and its influence on memory window (MW) and retention of FeFET. Fabricated FinFETs with ferroelectric gate stack were used to study defects properties (within HZO), trapping/FE-switching interplay, and dynamics. Starting from the electronic-assisted nucleation of FE domains, we investigated the interface charging and degr...
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关键词
Degradation,Electron traps,Switches,Logic gates,FinFETs,Iron,Hafnium compounds
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