Photo-induced solid-state reaction on the interface of As2S3–Ge30Se70 thin films

The laser-induced solid-state reaction in double-layer As2S3 and Ge30Se70 thin films evaporated on each other on substrates was studied. The extent of the solid-state reaction on the interface of two films was evaluated as a shift of the short-wavelength absorption edge, which was significantly higher for the illuminated/annealed double-layer in comparison with the sum of shifts of the individual virgin films. The presence of a newly created intermix layer was proved by FTIR, AFM and ellipsometry.