Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths

The single-event transient (SET) response and charge collection mechanisms are investigated for InGaAs FinFETs on InP substrates with sub-10-nm fin widths through pulsed laser irradiation. The dependences on fin width, $V_{DS}$ and $V_{GS}$ are examined. Consistent with devices with fin widths larger than 10 nm, higher transient peak and greater charge collection are observed...