First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices with poly-Si as guard ring material simultaneously were fabrica...

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关键词

Logic gates,Transistors,Inverters,Radio frequency,Threshold voltage,Surface treatment,Tin

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