Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD

Renren Xu,Jiaxin Yao,Gaobo Xu,Yanzhao Wei,Huaxiang Yin,Qingzhu Zhang,Guoliang Tian,Yanrong Wang,Gangping Yan,Jinjuan Xiang,Weihai Bu,Yongqin Wu,Zhenhua Wu,Jun Luo,Wenwu Wang

IEEE Transactions on Electron Devices（2022）

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摘要

In this work, a p-type high- ${k}$ metal gate (HKMG) with 3-nm interfacial Al2O3 doping HfO2 laminated dielectric is presented to achieve the required gate electrode effective work function (EWF). Through the ex-situ interfacial doping strategy with various Al2O3 thickness...

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关键词

Doping,Logic gates,Hafnium oxide,Dielectrics,Metals,High-k dielectric materials,Electrodes

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