An Investigation of HZO-Based N/p-Fefet Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode
IEEE Transactions on Electron Devices（2022）
关键词
Switches,Logic gates,FeFETs,Charge measurement,Current measurement,Pulse measurements,Capacitance,Charge trapping,ferroelectric memory,ferroelectric transistor,ferroelectrics,hafnium zirconium oxide,nonvolatile memory
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