Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking

For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O field-effect transistor (IGZO FET) for high-density 4F2 and long-retention 2T0C dynamic random access memory (DRAM) application. The device is fabricated in a back-end-of-line (BEOL) compatible process flow where the channel and gate-stack are deposited by plasma-enhanced atomic layer deposition (PEA...