Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device Architecture

Jie Liang,Chen Sun,Haiwen Xu,Eugene Y.-J. Kong,Bich-Yen Nguyen,Walter Schwarzenbach,Christophe Maleville,Remy Berthelon,Olivier Weber,Franck Arnaud,Aaron V.-Y. Thean,Xiao Gong

IEEE Transactions on Electron Devices（2022）

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摘要

In the first part of this two-part article, implant-induced strain relaxation has been successfully demonstrated on a common strained silicon-on-insulator (SSOI) platform. In this second part, based on an SSOI platform that could enable the cointegration of highly tensile-strained Si n-channel field-effect transistors (nFETs) and compressive-strained SiGe p-channel FETs (pFETs) on the same substra...

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关键词

Radio frequency,Performance evaluation,Silicon,Logic gates,Computational modeling,FinFETs,Electron mobility

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