A 5-nm 254-TOPS/W 221-TOPS/mm 2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations

Computing-in-memory (CIM) is being widely explored to minimize power consumption in data movement and multiply-and-accumulate (MAC) for edge-AI devices. Although most prior work focuses on analog-based CIM (ACIM) to leverage the BL charge/discharge operation, the lack of accuracy caused by transistor variation and the ADC is an issue [1]–[3]. In contrast, a digital-based CIM (DCIM) approach realiz...