SiC GTOs Thyristor for Long Term Reliability on Pulsed Power Application Test

Silicon Carbide (SiC) is a wide-bandgap semiconductor with a wider bandgap, higher critical electric field, higher saturation velocity, and higher thermal conductivity than silicon, making it desirable for pulsed power applications. The n-type Gate Turn-off thyristor (nGTO) is a controllable solid-state switch with high blocking voltage and high current conduction capabilities. However, its device...