Electrical Resistance of Single-Wall Carbon Nanotubes with Determined Chiral Indices

The properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.