Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics

A. D. Paul,S. Biswas,A. Dalal,A. Mondal,R. Mahapatra

IEEE Transactions on Electron Devices（2022）

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摘要

The effect of stack engineering of HfOx/ Al-doped HfOx(Al:HfOx)-based flexible resistive random access memory (ReRAM) devices including its synaptic characteristic has been investigated. The flexible Al/HfOx/Al:HfOx/HfOx/ITO/PET resistive memory device shows outstanding switching performance in terms of repeatability, statistical va...

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关键词

Hafnium oxide,Indium tin oxide,Optical switches,Resistance,Performance evaluation,Voltage,Substrates

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