Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

Low voltage high density non-volatile memories for data intensive applications need superior performance selectors in terns of endurance, thermal stability, and variability. In this work we studied the mechanisms and key performance factors of low voltage arsenic-free GeCTe-based selectors. The endurance acceleration curve based on operating current is reported. A remarkable endurance of 4x10(11) cycles around 100 mu A is experimentally demonstrated, together with a projected endurance above 10(13) cycles at 20 mu A. The nitrogen doped GeCTe selectors are also presented with enhanced thermal stability (400 degrees C, 30 min) and ultra-low threshold voltage cycle-to-cycle variation (< 30 mV/sigma).