Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures

For the first time, room temperature laser emission of an electrically pumped edge emitting laser device based on (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type-II W' quantum well heterostructures is shown. The device was grown using metal organic vapour phase epitaxy utilising the alternative nitrogen precursor di-tert-butyl-amino-arsane and characterised with electroluminescence spectroscopy. At low current densities, the emission wavelength was 1339 nm. It shifted blue with 4.26 meV/(kA/cm(2)) until the threshold current density was reached. At that point, the peak emission wavelength reached 1270 nm. With a cavity length of 2012 mu m, the investigated device reached lasing threshold at 9.5 kA/cm(2).