Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs

GaInN/GaN multi-quantum shells nanowires (NWs) are coaxially grown in non-polar m-plane or semi-polar r-plane surface, which is expected to improve the luminous efficiency. The emission wavelengths usually redshift from the sidewall to top c-plane region. However, the emission from c-plane has low luminous efficiency. In this research, the c-plane area of NWs in one sample was removed by dry etching prior to the fabrication process, while the other one without c-plane etching was prepared to investigate the effect of c-plane region on the luminescence intensity. The sample with etching shows 12 times higher output power than the sample without etching.