The Effect of Substituting Ga for Alon Crystal Structure of Phosphors MAl ₂Si₂O₈: Eu²⁺ (M= Ca, Sr, Ba)

A series of luminescence phosphors M 0.955 Al 2 –x Ga x Si 2 O 8 ∶Eu 2+ ( M =Ca, Sr, Ba, x = 0~1.0) were prepared via solid-state reaction in weak reductive atmosphere. The lattice positions were discussed. It was found that when Ga 3+ entered M Al 2 Si 2 O 8 lattice and substituted Al 3+ , complete solid solutions formed. The lattice parameters (a, b, c) and unit cell volume of phosphors M 0.955 Al 2 –x Ga x Si 2 O 8 : Eu 2+ ( M =Ca, Sr, Ba, x = 0~1.0) increased linearly, the lattice parameters (α, β,γ) of Ca 0.955 Al 2–x Ga x Si 2 O 8 ∶Eu 2+ (CAS) decreased linearly and the lattice parameter β of Sr 0.955 Al 2–x Ga x Si 2 O 8 ∶Eu 2+ (SAS) and Ba 0.955 Al 2–x Ga x Si 2 O 8 ∶Eu 2+ (BAS) increased linearly as Ga 3+ content increased.