Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C

Julia C. S. Sousa,Welder F. Perina,Roberto Rangel,Eddy Simoen,Anabela Veloso,Joao A. Martino,Paula G. D. Agopian

Solid-state Electronics（2022）

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摘要

•Evaluation of the GAA Nanosheet for analog applications.•Temperature influence on the silicon GAA Nanosheet analog figures of merit.•gm/ID design using advanced nodes.•Verilog A modelling with experimental data through a lookup table method.

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关键词

Gate-All-Around Nanosheet (GAA-NSH),Operational transconductance amplifier,Transistor efficiency (gm/ID),Lookup table,Analog Circuit Design

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