Monolayer‐Range Compositional Modulations in Al X Ga1−x N(x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux
physica status solidi (a)（2022）
Key words
AlGaN layers,compositional ordering,digital alloying,plasma-assisted molecular beam epitaxy,ultraviolet photoluminescence and stimulated emission
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