GaAs(100)表面硫钝化的新方法:CH3CSNH2/NH4OH处理

We have developed a new method to treat GaAs (100) surface by CH 3 CSNH 2 /NH 4 OH solution Synchrotron Radiation Photoemission Spectroscopy (SRPES) and X-ray Photoemission Spectroscopy (XPS) have been used to investigate the chemical states and electronic states of the passivated GaAs (100) surface. The results show that the sulfides of Ga and As were formed on CH 3 CSNH 2 /NH 4 OH solution treated GaAs(100) surface . and the oxides of Ga and As were removed . The treatment has an apparently passivating role for the GaAs. After annealing for the passivated surface , band bending effect was observed and the offset of 0.22 eV toward the higher binding energy was obtained this meant that the densenty of the states of GaAs surface was decreased.