Through Mold Via Development Using Laser Drilling Process for 3D Fan-out Wafer Level Package
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)(2021)
摘要
Microsecond UV laser drilling technology was used to form through mold vias (TMVs) with different aspect ratios, which can be applied to 3D Fan-Out Wafer Level Packaging (FOWLP). A test vehicle was designed to test the electrical continuity of through mold vias with different aspect ratios. The test vehicles consisted of a thick Cu pads electroplated on a substrate, mold compound was molded over the Cu pads and UV laser was used to form the blind vias. A thick Cu metallization was formed over the laser drilled blind vias to complete a daisy chain test structure. Trepanning method was used to created concentric laser paths, along with different Top-hat beams sizes to produce TMVs of different aspect ratios. Electrical continuity test, cross sectional and X-ray were used to verify the TMV daisy chains. The electrical test, cross sectional and X-rays shows good continuity in the TMVs structure.
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