Sputter Deposition and Characterization of Sm-Doped Pb(Mg1/3, Nb2/3)O₃–PbTiO₃ Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control(2022)
摘要
To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg
1/3
, Nb
2/3
)O
3
–PbTiO
3
(Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O
3
(PZT). The inherent piezoelectricity
$\left |{ {e}_{{31},{f}} }\right |$
achieved 20 C/m
2
, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the
$\left |{ {e}_{{31},{f}} }\right |$
value of the single Sm-PMN-PT film could be around 26 C/m
2
. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.
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关键词
Microelectromechanical systems (MEMSs),piezoelectric MEMS actuator,relaxor-based ferroelectric thin film,Sm-PMN-PT,transverse piezoelectric coefficient
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