2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G. Hu, G. Lauer,J. Z. Sun,P. Hashemi,C. Safranski,S. L. Brown,L. Buzi, E. R. J. Edwards, C. P. D'Emic, E. Galligan,M. G. Gottwald,O. Gunawan, H. Jung,J. Kim, K. Latzko,J. J. Nowak,P. L. Trouilloud, S. Zare,D. C. Worledge

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced m...

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关键词

Integrated circuits,Resistance,Torque,Magnetoresistive devices,Random access memory,Switches,Writing

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