Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

We demonstrate scaling of an enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor achieving best-in-class performance and figure-of-merits for integrated power electronics and RF mm-wave. Here, we demonstrate many firsts and industry records for GaN-on-Si, including record fT/fMAX of 300/400GHz and transconductance $\mathrm{G}_{\mathrm{M}} > 2100 \mu\...