InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with f MAX = 1.2 THz

A.M. Arabhavi, F. Ciabattini,S. Hamzeloui, R. Flückiger, T. Popovic,D. Han, D. Marti,G. Bonomo, R. Chaudhary,O. Ostinelli,C.R. Bolognesi

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

We report a new InP/GaAsSb Double Heterostructure Bipolar Transistor (DHBT) emitter fin architecture with a record fMAX= 1.2 THz, a simultaneous fT= 475 GHz and BVCEO= 5.4 V. The resulting BVCEO x fMAX= 6.48 THz-V is unparalleled in semiconductor technology. The performance arises because the process allows: i) an optimal choice of baseemitter...

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关键词

Extrapolation,Electric breakdown,Metals,DH-HEMTs,Gain measurement,Frequency measurement,III-V semiconductor materials

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