Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking

For the first time, we propose a stackable vertical Channel-All-Around (CAA) IGZO PETs for high-density 4F2and long retention 2TOC DRAM application. The device is fabricated in a BEOL-compatible process flow where the channel and gate stack is deposited by Plasma-Enhanced Atomic Layer Deposition (PEALD). The impact of IGZO cycle ratio and plasma power on the device electrical performanc...