Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

2D CMOS transistors fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for silicon transistors at sub-12 nm channel length [LG]. We demonstrate record NMOS contacts using a high melting point metal, down to 146 Ω-µm contact resistance (Rc). We present the best PMOS performance on a grown monolayer WSe2 film with 50 µA/µm Ion and 141 mV/dec sub-th...