Highly Reliable Cell Characteristics with CSOB(Channel-hole Sidewall ONO Butting) Scheme for 7th Generation 3D-NAND

Jin–kyu Kang,Jaeduk Lee,Yongsik Yim,Sejun Park,Hyun Suk Kim,Eun Suk Cho,Taehun Kim,Jung Hoon Lee,Joon Kim, Raeyoung Lee,Junhee Lim,Sunghoi Hur,Su Jin Ahn,Jaihyuk Song

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

Architecture change from BCS (Body Contact Spacer) scheme to CSOB (Channel-hole Sidewall ONO Butting) scheme for the 7th-generation 3D-NAND flash memory is discussed, which has been driven to adopt COP (Cell Over Peripheral circuits) scheme. Device considerations, such as cell-to-cell interference, cell current, and charge loss in the 7th-generation 3D-NAND are reviewed and solutions are suggested...

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关键词

Electron traps,Temperature distribution,Microprocessors,Thermionic emission,Computer architecture,Interference,Tunneling

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