Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing

R. Pillarisetty,T.F. Watson,B. Mueller,E. Henry,H.C. George,S. Bojarski,L. Lampert,F. Luthi, R. Kotlyar, O. Zietz, S. Neyens,F. Borjans,R. Caudillo,D. Michalak, R. Nahm,J. Park, M. Ramsey,J. Roberts,S. Schaal,G. Zheng,T. Krähenmann,M. Lodari, A.M.J. Zwerver,M. Veldhorst,G. Scappucci, L.M.K. Vandersvpen,J.S. Clarke

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

We discuss the engineering and physics of both Si MOS and Si/SiGe quantum well based spin qubit devices fabricated in a process compatible with CMOS high volume manufacturing. This includes new process innovations around buffer engineering, EUV lithography for gate pitch scaling, and the creation of a fully electrostatically defined planar quantum dot flow not requiring STI for confinement. Charge...

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关键词

Technological innovation,Extreme ultraviolet lithography,Qubit,Quantum dots,Logic gates,Silicon,Dielectrics

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