18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

Doohong Min,Jinha Park,Olivier Weber, Francois Wacquant,Alexandre Villaret,Eric Vandenbossche,Franck Arnaud,Emilie Bernard, Salim Elghouli, Christian Boccaccio,Laurent Favennec,Roberto Gonella, Jean Galvier,Jiyoung Yun,Jinwoo Park,Minuk Lee, Pyeongjun Yoon,Ilmin Lee, Heaseok Seo, Hoonsung Choi, Changbong Oh,Jinseok Kang, Sewan Park,Hyunjong Lee,Youngju Choi, Inwhan Kim, Joohyun Jo, Yoonsoo Park,Jinchan Park, Youngja Lee, Jinhyeok Jung,Juwon Lee, Hana Jang,Jihun Kang, Jisoo Kwon,Joochan Kim,Shigenobu Maeda,Youngki Hong

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

For the first time in the industry, 18nm FDSOI technology platform meeting the performance target for next MCU is presented based on triple gate oxide and HKMG process. To meet the performance target of next MCU, continuous-active and device width increase by “contact on gate over active” with wide process margin are utilized. Good yield in 64Mb SRAM array for all SRAM bitcells (bitcell area 0.102...

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关键词

Performance evaluation,Industries,Phased arrays,Phase change materials,Nonvolatile memory,Random access memory,Silicon-on-insulator

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