Dual gate synthetic MoS 2 MOSFETs with 4.56µF/cm 2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

Xiangyu Wu,Daire Cott,Zaoyang Lin,Yuanyuan Shi,Benjamin Groven,Pierre Morin,Devin Verreck,Quentin Smets,Henry Medina,Surajit Sutar,Inge Asselberghs,Iuliana Radu,Dennis Lin

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

We have engineered dual gate (DG) MoS2 transistors with scaled top and back gate stacks based on a surface physisorption ALD approach. A GdAlOx interfacial layer (IL) between the TMA ‘soak’ seed and the HfO2 layer has been introduced to improve Vt control, hysteresis, and long channel mobility. Connected dual gate MOSFET with 1-2ML MoS2 channel reaches <...

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关键词

MOSFET,Logic gates,Capacitance,Hafnium compounds,Sulfur,Transistors,Molybdenum

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