200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

T. Cosnier,O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga,A. Vohra,M. Zhao,B. Bakeroot, D. Wellekens,A. Magnani,P. Vudumula, U. Chatterjee, R. Langer, S. Decoutere

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the...

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关键词

Integrated circuits,Performance evaluation,Schottky diodes,Schottky barriers,HEMTs,Logic gates,Power electronics

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