Temperature and noise cancellation for Carbon Nanotube ISFET Sensor

2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)(2021)

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摘要
Ions-Sensitive Field-Effect Transistors (ISFETs) have been widely used as sensor interfaces for biochemical and chemistry fields. Despite ISFET's fast reaction (i.e. response), compact size as well as large measurement range, temperature variability is commonly impact the reliability of the measuring performance, which requires more protection in the results obtained and instruments of the study. In this article, we are introducing a new method for a CNISFET micro-sensor that uses a flexible analog circuit to perform noise reduction and temperature compensation. The circuit is developed for the common CNISFET micro sensor simulated on the TopSPICE platform. The proposed topology demonstrates a strong immunity to temperature variation and the interference of the noise.
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关键词
CNISFET,Noise reduction,Temperature
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