A Selective Feedback LNA Using Notch Filter in $0.18{\mu}m$ CMOS

Journal of the Institute of Electronics Engineers of Korea(2009)

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摘要
In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of .
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