Improvement of blue light-emitting diodes with an undoped graded layer as the electrons tunneling barrier layer

International Photonics and Optoelectronics Meetings (2012), paper ITh4A.20(2012)

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摘要
The advantages of blue light-emitting diodes with an undoped AlxGa1-xN graded layer are studied numerically. The simulation results show that the structure with a AlGaN graded layer has better performance over the common one.
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关键词
electrons tunneling barrier layer,llight-ight-ight-eeemitting
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