A Comparison of Single-Event Transients in Pristine and Irradiated ${{ m Al}_{0.3}}{{ m Ga}_{0.7}}{{ m N}/{ m GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

Single-event transients (SETs) were investigated in Al 0.3 Ga 0.7 N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.