GaN Schottky barrier diodes for microwave power transmission

Taofei Pu,Xiaobo Li,Xiao Wang,Yuyu Bu,Wei Zhao,Zhitao Chen,Jin-Ping Ao

2018 IEEE MTT-S International Wireless Symposium (IWS)（2018）

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摘要

In this presentation, GaN Schottky barrier diodes (SBDs) with low access sheet resistance of 25 Ω/□ is fabricated for microwave power transmission. Turn-on voltage of about 0.43 V and ON resistance of 3.15 are achieved by introducing TiN Schottky electrode and low sheet resistance on the access layer. Breakdown voltage of 30 V and off capacitance of 7 pF are also obtained, indicating that the diode is suitable for the application in the microwave power transmission system.

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关键词

Gallium nitride,Schottky barrier diode,access resistance,turn-on voltage,microwave power rectification

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