Optoelectronic components for optical information processing and communication in 850nm/1060nm/1550nm regimes (Conference Presentation)

Lasers, modulators and photodetectors are key components to configure transmitter and transceiver in optical communication links or optical information processing systems. There are a few optical transmission windows with low attenuation (< 0.2 dB/km) located around 1550nm, 1060nm and 850nm. The 1550nm and 850nm bands are wider explored than 1060nm window owing to more available components and optics in these regimes that used nowadays in telecom/datacom network facilities. This work presents design, fabrication and characterizations of III-V semiconductor quantum structures based optoelectronic components produced at RISE Acreo’s ISO9001 certified clean-room laboratory. The 850nm and 1060nm devices have been designed and fabricated using the quantum structures grown on GaAs substrate, while the 1550nm components are based on the epi structures lattice matched to InP substrate. Desired operating wavelength can be turned by bandgap engineering, and the format of the devices can be arranged according customized specifications. As a demonstration, a 2x64 spatial light modulator (SLM) array with gradually increase operating wavelengths of each pixel at about 850nm will be detailed, which was used to achieve planar-integrated free-space optics for signal splitting, interconnection and processing. For 1550nm window, two components will be presented, one is a small aperture electroabsorption modulator (EAM) with diameter of 150µm that reached data rate at about 1 Gbps in a FSO link, another is an avalanche photodiode (APD) linear array. In addition, the lasers operating at about 1060nm utilizing quantum wells or quantum dots will be addressed.