O-band P-doped InAs/GaAs quantum dot lasers directly grown on SOI substrate

Jing-Zhi Huang,Wen-Qi Wei,Jia-Jian Chen,Zihao Wang,Ting Wang,Jian-Jun Zhang

Asia Communications and Photonics Conference 2021（2021）

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摘要

This work demonstrated the first electrically pumped ground-state InAs QD narrow ridge lasers emission at 1310 nm (O-band) epitaxially grown on standard SOI substrate with continuous-wave (CW) current injection at room temperature.

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关键词

O-band,SOI substrate,continuous-wave current injection,electrically pumped ground-state,P-doped InAs-GaAs quantum dot lasers,laser emission,epitaxial growth,temperature 293.0 K to 298.0 K,InAs-GaAs:P

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