Dilute-As InGaNAs quantum wells for red-emitting laser active regions

The material gain and threshold current density properties of dilute-As InGaNAs-based quantum wells (QWs) are analyzed via a self-consistent 6-band k·p formulism. Amber emission is achieved by the implementation of dilute-As InGaNAs with low In-content. Significant threshold current density reduction and enhanced material gain are obtained by the employment of an In0.19Ga0.81N0.97As0.03 (Eg ~ 2.1 eV) alloy into the active region for red-emitting lasers, compared to a conventional high In-content InGaN-based QW emitting at the same wavelength (λ~600 nm). Our study reveals the excellent potential of the dilute-As InGaNAs for implementation as the active region for red-emitting lasers.