Influence of Electron-Phonon Interactions on the Spectral Properties of Defects in Hexagonal Boron Nitride
Quantum Information and Measurement (QIM) V: Quantum Technologies (2019), paper S4A.2(2019)
摘要
We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (≈ 6.5 meV) with a Debye-Waller factor of 0.59 is observed.
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