Facile graphite contacting approach for fabrication of b-Ga2O3 based UVC photodetectors

B-Ga2O3 is a novel Ultra Wide Bandgap semiconductor, with many emerging applications (1), including that of a solar blind UVC photodetector (2). A key limitation, as for many WBG oxides, is the difficulty in reliably creating high quality Schottky contacts (typical barrier heights are in the range of 1.00-1.50 eV3). However, some studies indicate that graphene- or graphite-based electrodes can give an increase of the barrier height (4). The challenge of our study was to develop a facile and cost-effective method in order to obtain a good quality Schottky contact with graphite. Many studies employ Au in order to make Schottky contacts to B-Ga2O3. This study involves comparison of Au and graphite contacting schemes for inter-digitated-transducer (IDT) Schottky Metal-Semiconductor-Metal (MSM) contacts on B-Ga2O3 thin films grown on c-Al2O3 substrates by Pulsed Laser Deposition (PLD).